| PART |
Description |
Maker |
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| CY62157EV30LL-55ZSXET |
8-Mbit (512 K 16) Static RAM
|
Cypress
|
| CYRS1049DV33 |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
| CY7C1049DV33-10VXI CY7C1049DV33-10VXIT CY7C1049DV3 |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY62148EV30LL-45BVI CY62148EV30LL-45BVIT CY62148EV |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY62148ELL-45ZSXA |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY7C1049D-10VXI CY7C1049D11 |
4-Mbit (512 K × 8) Static RAM TTL-compatible inputs and outputs
|
Cypress Semiconductor
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
| CY62126EV30 CY62126EV30LL CY62126EV30LL-45ZSXI CY6 |
1-Mbit (64 K x 16) Static RAM Automatic power down when deselected
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| CY62157DV3006 CY62157DV30L-55BVXE CY62157DV30L-55B |
8-Mbit (512K x 16) MoBL㈢ Static RAM
8-Mbit (512K x 16) MoBL? Static RAM
8-Mbit (512K x 16) MoBL垄莽 Static RAM
8-Mbit (512K x 16) MoBL Static RAM
|
Cypress Semiconductor
|
| UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
